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Indium phosphide (InP) is a semiconductor composed of indium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.
Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.
The Sellmeier equation that describes how the optical refractive index for indium phosphide depends on wavelength is given by:
<math>
n^2(\lambda) = 1
+ 7.255
+ \frac{2.316 \lambda^2 }{ \lambda^2 - 0.6263^2}
+ \frac{2.765 \lambda^2 }{ \lambda^2 - 32.935^2}
<math>
where λ is the wavelength in micrometres.
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